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JS28F256J3F105A 参数 Datasheet PDF下载

JS28F256J3F105A图片预览
型号: JS28F256J3F105A
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56]
分类和应用: 光电二极管
文件页数/大小: 66 页 / 711 K
品牌: NUMONYX [ NUMONYX B.V ]
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®
Numonyx™ StrataFlash Embedded Memory (J3-65nm)  
12.3  
Power Supply Decoupling  
Flash memory devices require careful power supply de-coupling. Three basic power  
supply current considerations are: 1) standby current levels; 2) active current levels;  
and 3) transient peaks produced when CEX and OE# are asserted and deasserted.  
When the device is accessed, many internal conditions change. Circuits within the  
device enable charge-pumps, and internal logic states change at high speed. All of  
these internal activities produce transient signals. Transient current magnitudes depend  
on the device outputs’ capacitive and inductive loading. Two-line control and correct  
de-coupling capacitor selection suppress transient voltage peaks.  
Because Numonyx MLC flash memory devices draw their power from VCC, VSS, and  
VCCQ, each power connection should have a 0.1 µF ceramic capacitor to ground. High-  
frequency, inherently low-inductance capacitors should be placed as close as possible  
to package leads.  
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor  
should be placed between power and ground close to the devices. The bulk capacitor is  
meant to overcome voltage droop caused by PCB trace inductance.  
December 2008  
319942-02  
Datasheet  
37