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JS28F640P30T85 参数 Datasheet PDF下载

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型号: JS28F640P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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P30  
9.2  
Device Commands  
Device operations are initiated by writing specific device commands to the Command  
User Interface (CUI). See Table 23, “Command Bus Cycles” on page 45. Several  
commands are used to modify array data including Word Program and Block Erase  
commands. Writing either command to the CUI initiates a sequence of internally-timed  
functions that culminate in the completion of the requested task. However, the  
operation can be aborted by either asserting RST# or by issuing an appropriate  
suspend command.  
Table 23: Command Bus Cycles  
First Bus Cycle  
Second Bus Cycle  
Bus  
Mode  
Command  
Cycles  
Oper  
Addr(1)  
Data(2)  
Oper  
Addr(1)  
Data(2)  
Read Array  
1
2  
2  
2
Write  
Write  
Write  
Write  
Write  
DnA  
DnA  
DnA  
DnA  
DnA  
0xFF  
0x90  
0x98  
0x70  
0x50  
-
-
DBA + IA  
DBA + QA  
DnA  
-
ID  
Read Device Identifier  
CFI Query  
Read  
Read  
Read  
-
Read  
QD  
SRD  
-
Read Status Register  
Clear Status Register  
1
-
0x40/  
0x10  
Word Program  
2
Write  
Write  
Write  
WA  
WA  
WA  
Write  
Write  
Write  
WA  
WA  
WA  
WD  
Program  
Buffered Program(3)  
> 2  
> 2  
0xE8  
0x80  
N - 1  
0xD0  
Buffered Enhanced Factory  
Program (BEFP)(4)  
Erase  
Block Erase  
2
Write  
BA  
0x20  
Write  
BA  
0xD0  
Program/Erase Suspend  
Program/Erase Resume  
Lock Block  
1
1
2
2
2
2
2
Write  
Write  
Write  
Write  
Write  
Write  
Write  
DnA  
DnA  
BA  
0xB0  
0xD0  
0x60  
0x60  
0x60  
0xC0  
0xC0  
-
-
-
Suspend  
-
-
-
Write  
Write  
Write  
Write  
Write  
BA  
BA  
BA  
PRA  
LRA  
0x01  
0xD0  
0x2F  
PD  
Block  
Locking/  
Unlocking  
Unlock Block  
BA  
Lock-down Block  
BA  
PRA  
LRA  
Program Protection Register  
Program Lock Register  
Protection  
LRD  
Program Read Configuration  
Register  
Configuration  
2
Write  
RCD  
0x60  
Write  
RCD  
0x03  
Notes:  
1.  
First command cycle address should be the same as the operation’s target address.  
DBA = Device Base Address (NOTE: needed for dual-die 512 Mb device)  
DnA = Address within the device.  
IA = Identification code address offset.  
QA = CFI Query address offset.  
WA = Word address of memory location to be written.  
BA = Address within the block.  
PRA = Protection Register address.  
LRA = Lock Register address.  
RCD = Read Configuration Register data on QUAD+ A[15:0] or EASY BGA A[16:1].  
ID = Identifier data.  
QD = Query data on DQ[15:0].  
2.  
SRD = Status Register data.  
WD = Word data.  
N = Word count of data to be loaded into the write buffer.  
PD = Protection Register data.  
LRD = Lock Register data.  
3.  
4.  
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This  
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming  
operation.  
The confirm command (0xD0) is followed by the buffer data.  
November 2007  
Order Number: 306666-11  
Datasheet  
45