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JS28F640P30T85 参数 Datasheet PDF下载

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型号: JS28F640P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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P30  
Figure 25: Reset Operation Waveforms  
P1  
P2  
P2  
P3  
R5  
VIH  
VIL  
(
A) Reset during  
RST# [P]  
RST# [P]  
RST# [P]  
VCC  
read mode  
Abort  
Complete  
R5  
(B) Reset during  
VIH  
VIL  
program or block erase  
P1  
P2  
Abort  
Complete  
R5  
(C) Reset during  
VIH  
VIL  
program or block erase  
P1  
P2  
VCC  
0V  
(D) VCC Power-up to  
RST# high  
8.3  
Power Supply Decoupling  
Flash memory devices require careful power supply de-coupling. Three basic power  
supply current considerations are 1) standby current levels, 2) active current levels,  
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.  
When the device is accessed, many internal conditions change. Circuits within the  
device enable charge-pumps, and internal logic states change at high speed. All of  
these internal activities produce transient signals. Transient current magnitudes depend  
on the device outputs’ capacitive and inductive loading. Two-line control and correct  
de-coupling capacitor selection suppress transient voltage peaks.  
Because Numonyx Multi-Level Cell (MLC) flash memory devices draw their power from  
VCC, VPP, and VCCQ, each power connection should have a 0.1 µF ceramic capacitor to  
ground. High-frequency, inherently low-inductance capacitors should be placed as close  
as possible to package leads.  
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor  
should be placed between power and ground close to the devices. The bulk capacitor is  
meant to overcome voltage droop caused by PCB trace inductance.  
Datasheet  
42  
November 2007  
Order Number: 306666-11