P30
Figure 24: Write-to-Synchronous Read Timing
R302
R301
R2
CLK
W5
W8
R306
R106
Address [A]
R104
R303
ADV#
W6
W2
R11
CE# [E}
W18
W19
W20
W3
WE# [W]
OE# [G]
WAIT [T]
R4
R15
R3
R307
W7
R304
R305
R304
W4
D
Q
Q
Data [D/Q]
RST# [P]
W1
Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0, Wait asserted low).
7.5
Program and Erase Characteristics
Table 20:
VPPL
VPPH
Typ
Num
Symbol
Parameter
Units
Notes
Min
Typ
Max
Min
Max
Conventional Word Programming
Single word - 130nm
Single word - 65nm
Single cell
-
-
-
90
125
30
200
150
60
-
-
-
85
125
30
190
150
60
Program
Time
W200
tPROG/W
µs
1
1
Buffered Programming
W200
W251
tPROG/W
tBUFF
Single word
-
-
90
440
200
880
-
-
85
190
680
Program
Time
µs
µs
32-word buffer
340
Buffered Enhanced Factory Programming
W451
W452
tBEFP/W
Single word
BEFP Setup
n/a
n/a
n/a
n/a
n/a
n/a
-
10
-
-
-
1,2
1
Program
tBEFP/Setup
5
Erasing and Suspending
November 2007
Order Number: 306666-11
Datasheet
39
NUMONYX [ NUMONYX B.V ]
