Intel® Embedded Flash Memory (J3 v. D)
6.0
Electrical Characteristics
6.1
DC Current Specifications
Table 7.
DC Current Characteristics (Sheet 1 of 2)
VCCQ
VCC
Parameter
2.7 - 3.6V
2.7 - 3.6V
Test Conditions
Notes
Symbol
Typ
Max
Unit
VCC = VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
ILI
Input and VPEN Load Current
Output Leakage Current
1
μA
μA
1
1
VCC= VCC Max; VCCQ = VCCQ Max
VIN = VCCQ or VSS
ILO
10
CMOS Inputs, VCC = VCC Max; Vccq =
VccqMax
32, 64, 128, 256
Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31),
50
120
μA
Mbit
RP# = VCCQ ± 0.2 V
ICCS
VCC Standby Current
1,2,3
TTL Inputs, VCC = VCC Max,
Vccq = VccqMax
32, 64, 128, 256
Mbit
0.71
50
2
mA
Device is disabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31), RP# = VIH
ICCD
VCC Power-Down Current
120
μA
RP# = GND ± 0.2 V, IOUT (STS) = 0 mA
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max
Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
15
24
20
29
mA
mA
f = 5 MHz, IOUT = 0 mA
4-Word
Page
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max
Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
1,3
f = 33 MHz, IOUT = 0 mA
ICCR
CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
VCC Page Mode Read Current
10
30
15
54
mA
mA
Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 5 MHz, IOUT = 0 mA
8-Word Page
CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ
Max using standard 8 word page mode
reads.
Device is enabled (see Table 16, “Chip
Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31)
f = 33 MHz, IOUT = 0 mA
35
40
60
70
mA
mA
CMOS Inputs, VPEN = VCC
TTL Inputs, VPEN = VCC
VCC Program or Set
ICCW
1,4
Lock-Bit Current
Datasheet
20
December 2007
Document Number: 316577-006
NUMONYX [ NUMONYX B.V ]
