28F640L18, 28F128L18, 28F256L18
12.4
Program and Erase Characteristics
V
V
PPH
PPL
Nbr.
Symbol
Parameter
Units Notes
Min Typ Max Min Typ Max
Conventional Word Programming
Single word
Single cell
150 TBD150 TBD
30 TBD30 TBD
Program
Time
W200
t
µs
µs
1
1
PROG/W
Buffered Programming
W200
W201
t
t
Single word
One Buffer (32 words)
150 TBD150 TBD
640 TBD288 864
Program
Time
PROG/W
PROG/PB
Buffered Enhanced Factory Programming
W451
t
t
Single word
N/A N/A N/A N/A
N/A N/A N/A
7
21
1,2
1
BEFP/W
Program
µs
BEFP/
W452
Buffered EFP Setup
5
N/A N/A
Setup
Erasing and Suspending
W500
W501
W600
t
t
t
t
16K-Word Parameter
64K-Word Main
Program suspend
Erase suspend
0.4
0.8
20
2.5
4
25
25
0.4
0.7
20
2.5
4
25
25
ERS/PB
ERS/MB
SUSP/P
SUSP/E
Erase Time
s
1
Suspend
Latency
µs
W601
20
20
NOTES:
1. Typical values measured at T = +25 °C and nominal voltages. Performance numbers are valid for all speed
A
versions. Excludes system overhead. Sampled, but not 100% tested.
2. Averaged over entire device.
12.5
Reset Specifications
Nbr. Symbol
Parameter
RST# pulse width low
RST# low to device reset during erase
RST# low to device reset during program
Min
Max
Unit
Notes
P1
P2
P3
t
t
t
100
ns
1,2,3,4
1,3,4,7
1,3,4,7
1,4,5,6
PLPH
25
25
PLRH
µs
V
Power valid to RST# de-assertion (high)
60
VCCPH
CC
NOTES:
1. These specifications are valid for all device versions (packages and speeds).
2. The device may reset if t is <t MIN, but this is not guaranteed.
PLPH
PLPH
3. Not applicable if RST# is tied to Vcc.
4. Sampled, but not 100% tested.
5. If RST# is tied to the V supply, device will not be ready until t
after V >= V min.
CC CC
CC
VCCPH
6. If RST# is tied to any supply/signal with V
voltage levels, the RST# input voltage must not exceed V
CCQ
CC
until V >= V (min).
7. Reset completes within t
CC
CC
if RST# is asserted while no erase or program operation is executing.
PLPH
62
Datasheet
NUMONYX [ NUMONYX B.V ]
