28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
7.0
Electrical Specifications
7.1
DC Current Characteristics
Table 13.
DC Current Characteristics (Sheet 1 of 2)
VCC
2.7 V–3.6 V 2.7 V–2.85 V
2.7 V–3.3 V
1.8 V–2.5 V
Sym
Parameter
VCCQ 2.7 V–3.6 V 1.65 V–2.5 V
Unit
Test Conditions
Note
Typ Max
Typ
Max
Typ
Max
VCC = VCCMax
VCCQ = VCCQMax
ILI
Input Load Current
1,2
1
1
1
µA
VIN = VCCQ or GND
V
CC = VCCMax
ILO
Output Leakage Current
1,2
10
10
10
µA VCCQ = VCCQMax
VIN = VCCQ or GND
VCC Standby Current for
0.13 and 0.18 Micron
Product
V
CC = VCCMax
1
1
7
10
7
15
25
15
25
18
20
20
7
50
50
20
25
15
150
150
7
250
250
20
µA
µA
µA
µA
mA
CE# = RP# = VCCQ
or during Program/ Erase
Suspend
ICCS
ICCD
ICCR
V
CC Standby Current for
WP# = VCCQ or GND
0.25 Micron Product
VCC Power-Down Current
for 0.13 and 0.18 Micron
Product
VCC = VCCMax
1,2
1,2
1,2,3
VCCQ = VCCQMax
VIN = VCCQ or GND
RP# = GND ± 0.2 V
VCC Power-Down Current
for 0.25 Product
7
7
7
25
VCC Read Current for
0.13 and 0.18 Micron
Product
VCC = VCCMax
9
8
9
15
VCCQ = VCCQMax
OE# = VIH, CE# =VIL
f = 5 MHz, IOUT=0 mA
Inputs = VIL or VIH
VCC Read Current for
0.25 Micron Product
1,2,3
1
10
0.2
18
8
18
5
8
15
5
9
15
5
mA
µA
VPP Deep Power-Down
Current
RP# = GND ± 0.2 V
VPP ≤ VCC
IPPD
0.2
18
10
21
16
0.2
18
10
21
16
VPP =VPP1,
55
22
45
15
55
30
45
45
55
30
45
45
mA
mA
mA
mA
Program in Progress
ICCW
VCC Program Current
VCC Erase Current
1,4
1,4
VPP = VPP2 (12v)
Program in Progress
VPP = VPP1,
16
8
Erase in Progress
ICCE
VPP = VPP2 (12v) ,
Erase in Progress
VCC Erase Suspend
Current for 0.13 and 0.18
Micron Product
7
15
25
50
50
200
200
50
50
200
200
µA
µA
ICCES
ICCWS
/
CE# = VIH, Erase
Suspend in Progress
1,4,5
1,4
VCC Erase Suspend
Current for 0.25 Micron
Product
10
2
15
2
15
2
15
µA VPP ≤ VCC
IPPR
VPP Read Current
50
200
50
200
50
200
µA VPP > VCC
18 Aug 2005
34
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
Datasheet
NUMONYX [ NUMONYX B.V ]
