28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
8.0
AC Characteristics
8.1
AC Read Characteristics
Read Operations—8-Mbit Density
Density
Table 15.
8 Mbit
Product
90 ns
3.0 V – 3.6 V 2.7 V – 3.6 V
110 ns
3.0 V – 3.6 V 2.7 V – 3.6 V
#
Sym
Parameter
Unit
VCC
Note
Min
Max
Min
Max
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
3,4
80
90
100
110
ns
ns
ns
ns
ns
ns
ns
ns
ns
R2
R3
R4
R5
R6
R7
R8
R9
tAVQV Address to Output Delay
tELQV CE# to Output Delay
tGLQV OE# to Output Delay
tPHQV RP# to Output Delay
tELQX CE# to Output in Low Z
tGLQX OE# to Output in Low Z
tEHQZ CE# to Output in High Z
tGHQZ OE# to Output in High Z
Output Hold from
3,4
80
80
90
90
100
100
30
110
110
30
1,3,4
1,3,4
3,4
30
30
150
150
150
150
2,3,4
2,3,4
2,3,4
2,3,4
0
0
0
0
0
0
0
0
20
20
20
20
20
20
20
20
Address, CE#, or OE#
Change, Whichever
R10
tOH
2,3,4
0
0
0
0
ns
Occurs First
Notes:
1.
2.
3.
4.
OE# can be delayed up to tELQV– GLQV
Sampled, but not 100% tested.
See Figure 10 “Read Operation Waveform” on page 40.
See Figure 12 “AC Input/Output Reference Waveform” on page 46 for timing measurements and maximum allowable
input slew rate.
t
after the falling edge of CE# without impact on tELQV.
Datasheet
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
18 Aug 2005
37
NUMONYX [ NUMONYX B.V ]
