28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3.2
Memory Maps and Block Organization
The B3 flash memory device uses an asymmetrically blocked architecture, enabling system
integration of code and data within a single flash memory device. Each block can be erased
independently of other blocks up to 100,000 times. For the address locations of each block, see the
following memory maps:
• Table 4 “16-Mbit and 32-Mbit Word-Wide Memory Addressing Map” on page 11
• Table 5 “4-Mbit and 8-Mbit Word-Wide Memory Addressing Map” on page 14
• Table 6 “16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing Map” on page 15
• Table 7 “8-Mbit and 16-Mbit Byte-Wide Memory Addressing Map” on page 20
• Table 8 “4-Mbit Byte Wide Memory Addressing Map” on page 23
3.2.1
3.2.2
Parameter Blocks
The B3 flash memory device architecture includes parameter blocks to facilitate storing frequently
updated small parameters (such as data traditionally stored in an EEPROM). The word-rewrite
functionality of EEPROMs can be emulated using software techniques. Each flash memory device
contains eight parameter blocks of 8 Kbytes/4 Kwords (8192 bytes/4,096 words) each.
Main Blocks
After the parameter blocks, the remainder of the flash memory array is divided into equal-size main
blocks (65,536 bytes/32,768 words) for data or code storage.
• The 8-Mbit flash memory device contains 15 main blocks.
• The 16-Mbit flash memory device contains 31 main blocks.
• The 32-Mbit memory device contains 63 main blocks.
• The 64-Mbit memory device contains 127 main blocks.
3.2.3
4-Mbit, 8-Mbit, 16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Maps
Table 4.
16-Mbit and 32-Mbit Word-Wide Memory Addressing Map (Sheet 1 of 4)
16-Mbit and 32-Mbit Word-Wide Memory Addressing
Top Boot
16 Mbit
Bottom Boot
16 Mbit
Size
(KW)
Size
(KW)
32 Mbit
8 Mbit
32 Mbit
4
4
FF000-FFFFF
FE000-FEFFF
1FF000-1FFFFF
1FE000-1FEFFF
32
32
1F8000-1FFFFF
1F0000-1F7FFF
1E8000-
1EFFFF
4
4
FD000-FDFFF
FC000-FCFFF
1FD000-1FDFFF
1FC000-1FCFFF
32
32
1E0000-
1E7FFF
Datasheet
Intel® Advanced Boot Block Flash Memory (B3)
Order Number: 290580, Revision: 020
18 Aug 2005
11
NUMONYX [ NUMONYX B.V ]
