Numonyx™ Wireless Flash Memory (W18)
6.0
6.1
Note:
Electrical Specifications
DC Current Characteristics
Specifications are for 130 nm and 90 nm devices unless otherwise stated; the 128 Mbit
density is supported ONLY on 90 nm.
Table 11: DC Current Characteristics (Sheet 1 of 2)
V
CCQ
= 1.8 V
Symbol
Parameter
(1)
32/64-Mbit
Typ
Max
±1
128-Mbit
Typ
—
Max
±1
Unit
Test Condition
Note
I
LI
Input Load
—
µA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
CE# = V
CC
RST# =V
CCQ
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
CE# = V
SSQ
RST# =V
CCQ
All other inputs =V
CCQ
or V
SSQ
4 Word Read
Burst length = 4
Burst length = 8
Burst length =16
Burst length = Continuous
Burst length = 4
Burst length = 8
Burst length = 16
Burst length = Continuous
Burst length = 4
Burst length = 8
Burst length = 16
Burst length = Continuous
8
I
LO
130 nm
I
CCS
90 nm
I
CCS
130 nm
I
CCAPS
90 nm
I
CCAPS
Output
Leakage
D[15:0]
—
±1
—
±1
µA
8
V
CC
Standby
22
8
APS
22
Asynchronous
Page Mode
f=13 MHz
50
50
50
50
8
—
8
—
70
µA
—
70
µA
—
9
10
3
6
6
13
14
18
20
16
18
22
25
17
20
25
30
40
15
40
4
6
8
11
11
7
10
12
13
—
—
—
—
18
8
18
7
13
14
19
20
16
18
22
25
—
—
—
—
40
15
40
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3
I
CCR
Average
V
CC
Read
Synchronous CLK
= 40 MHz
8
10
11
7
3
Synchronous CLK
= 54 MHz
10
12
13
8
3
I
CCR
Average
V
CC
Read
Synchronous CLK
= 66 MHz
11
14
16
3, 4
I
CCW
V
CC
Program
18
8
18
V
PP
= V
PP1,
Program in Progress
V
PP
= V
PP2,
Program in Progress
V
PP
= V
PP1,
Block Erase in
Progress
V
PP
= V
PP2,
Block Erase in
Progress
4,5,6
I
CCE
V
CC
Block Erase
8
15
8
15
mA
4,5,6
November 2007
Order Number: 290701-18
Datasheet
23
NUMONYX [ NUMONYX B.V ]
