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CF5026AL5 参数 Datasheet PDF下载

CF5026AL5图片预览
型号: CF5026AL5
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体振荡器模块集成电路 [Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 16 页 / 121 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
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5026 series  
5026BL1 (2.5V operation)  
= 2.25 to 2.75V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
V
DD  
SS  
Rating  
Parameter  
Symbol  
Condition  
Unit  
min  
1.65  
typ  
1.95  
0.3  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 2.25V, I = 8mA  
DD OH  
V
V
OH  
V
Q: Measurement cct 2, V = 2.25V, I = 8mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
V
IH  
DD  
V
0.3V  
V
IL  
DD  
V
V
= V  
= V  
10  
10  
ꢀA  
ꢀA  
OH  
DD  
Output leakage current  
I
Q: Measurement cct 2, INHN = LOW  
Z
OL  
SS  
Measurement cct 3, load cct 1, INHN = open, C = 30pF,  
L
f = 100MHz  
Current consumption  
Standby current  
I
14  
28  
mA  
DD2  
I
Measurement cct 3, INHN = LOW  
2
6
3
ꢀA  
MΩ  
kΩ  
kΩ  
ST  
R
12  
UP1  
INHN pull-up resistance  
Feedback resistance  
Measurement cct 4  
R
20  
50  
100  
200  
150  
UP2  
R
Measurement cct 5  
f
Oscillator amplifier output  
resistance  
R
Design value. A monitor pattern on a wafer is tested.  
170  
200  
230  
D
C
6.8  
8.5  
8
9.2  
pF  
pF  
G
Built-in capacitance  
Design value. A monitor pattern on a wafer is tested.  
C
10  
11.5  
D
5026BL1 (3.0V operation)  
= 2.7 to 3.6V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
V
DD  
SS  
Rating  
Parameter  
Symbol  
Condition  
Unit  
min  
2.3  
typ  
2.4  
0.3  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 2.7V, I = 8mA  
DD OH  
V
V
OH  
V
Q: Measurement cct 2, V = 2.7V, I = 8mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
V
IH  
DD  
V
0.3V  
V
IL  
DD  
V
V
= V  
= V  
10  
10  
ꢀA  
ꢀA  
OH  
DD  
Output leakage current  
I
Q: Measurement cct 2, INHN = LOW  
Z
OL  
SS  
Measurement cct 3, load cct 1, INHN = open, C = 30pF,  
L
f = 100MHz  
Current consumption  
Standby current  
I
19  
38  
mA  
DD2  
I
Measurement cct 3, INHN = LOW  
2
4
5
ꢀA  
MΩ  
kΩ  
kΩ  
ST  
R
8
UP1  
INHN pull-up resistance  
Feedback resistance  
Measurement cct 4  
R
15  
50  
75  
150  
150  
UP2  
R
Measurement cct 5  
f
Oscillator amplifier output  
resistance  
R
Design value. A monitor pattern on a wafer is tested.  
170  
200  
230  
D
C
6.8  
8.5  
8
9.2  
pF  
pF  
G
Built-in capacitance  
Design value. A monitor pattern on a wafer is tested.  
C
10  
11.5  
D
SEIKO NPC CORPORATION —7  
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