5026 series
Electrical Characteristics
5026AL× (2.5V operation)
V
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
1.95
0.3
–
Parameter
Symbol
Condition
Unit
min
1.65
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.25V, I = 4mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.25V, I = 4mA
DD OL
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
14
9
ꢀA
ꢀA
mA
mA
mA
mA
mA
mA
ꢀA
MΩ
kΩ
kΩ
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
–
OL
SS
5026AL1
5026AL2
5026AL3
5026AL4
5026AL5
5026AL6
–
7
–
4.5
3.5
2.9
2.5
2.4
–
–
7
Measurement cct 3, load cct 1,
INHN = open, C = 30pF, f = 50MHz
Current consumption
I
DD2
L
–
5.8
5.0
4.8
3
–
–
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
ST
R
2
6
12
200
150
UP1
INHN pull-up resistance
Feedback resistance
R
20
50
100
–
UP2
R
Measurement cct 5
f
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
340
400
460
Ω
D
C
6.8
8.5
8
9.2
pF
pF
G
Built-in capacitance
C
10
11.5
D
SEIKO NPC CORPORATION —5