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CF5015BL3 参数 Datasheet PDF下载

CF5015BL3图片预览
型号: CF5015BL3
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V工作基频晶体振荡器模块集成电路 [2.5V Operation Fundamental Frequency Crystal Oscillator Module ICs]
分类和应用: 振荡器晶体振荡器
文件页数/大小: 10 页 / 123 K
品牌: NPC [ NIPPON PRECISION CIRCUITS INC ]
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CF5015 series  
3V operation (CF5015BL×)  
= 2.7 to 3.6V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
V
DD  
SS  
Rating  
typ  
2.4  
0.ꢀ  
Parameter  
Symbol  
Condition  
Unit  
min  
2.1  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 2.7V, I = 4mA  
DD OH  
V
V
OH  
V
Q: Measurement cct 1, V = 2.7V, I = 4mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
V
IH  
DD  
V
0.ꢀV  
V
IL  
DD  
V
V
= V  
= V  
10  
10  
11  
6
ꢁA  
ꢁA  
mA  
mA  
mA  
mA  
mA  
ꢁA  
MΩ  
kΩ  
kΩ  
pF  
pF  
OH  
DD  
Output leakage current  
I
Q: Measurement cct 2, INHN = LOW  
Z
OL  
SS  
CF5015BL1  
CF5015BL2  
CF5015BLꢀ  
CF5015BL4  
CF5015BL5  
5.5  
Measurement cct ꢀ, load cct 1,  
INHN = open, C = 15pF, f = 60MHz  
Current consumption  
I
2
4
DD  
L
1.5  
1
2
Standby current  
I
Measurement cct ꢀ, INHN = LOW  
Measurement cct 4  
5
ST  
R
1
4
10  
200  
600  
4.6  
9.2  
UP1  
INHN pull-up resistance  
Feedback resistance  
Built-in capacitance  
R
20  
100  
ꢀ.4  
6.8  
100  
ꢀ00  
4
UP2  
R
Measurement cct 5  
f
C
G
Design value. A monitor pattern on a wafer is tested.  
C
8
D
5V operation (CF5015BL×)  
= 4.5 to 5.5V, V = 0V, Ta = 40 to +85°C unless otherwise noted.  
V
DD  
SS  
Rating  
typ  
4.2  
0.ꢀ  
Parameter  
Symbol  
Condition  
Unit  
min  
ꢀ.9  
max  
HIGH-level output voltage  
LOW-level output voltage  
HIGH-level input voltage  
LOW-level input voltage  
V
Q: Measurement cct 1, V = 4.5V, I = 8mA  
DD OH  
V
V
OH  
V
Q: Measurement cct 1, V = 4.5V, I = 8mA  
DD OL  
0.4  
OL  
V
INHN  
INHN  
0.7V  
V
IH  
DD  
V
0.ꢀV  
V
IL  
DD  
V
V
= V  
= V  
10  
10  
ꢀ0  
19  
1ꢀ  
10  
8
ꢁA  
ꢁA  
mA  
mA  
mA  
mA  
mA  
ꢁA  
MΩ  
kΩ  
kΩ  
pF  
pF  
OH  
DD  
Output leakage current  
I
Q: Measurement cct 2, INHN = LOW  
Z
OL  
SS  
CF5015BL1  
CF5015BL2  
CF5015BLꢀ  
CF5015BL4  
CF5015BL5  
15  
9.5  
6.5  
5
Measurement cct ꢀ, load cct 1,  
INHN = open, C = ꢀ0pF, f = 60MHz  
Current consumption  
I
DD  
L
4
Standby current  
I
Measurement cct ꢀ, INHN = LOW  
Measurement cct 4  
10  
8
ST  
R
0.5  
10  
100  
ꢀ.4  
6.8  
2
UP1  
INHN pull-up resistance  
Feedback resistance  
Built-in capacitance  
R
50  
ꢀ00  
4
150  
600  
4.6  
9.2  
UP2  
R
Measurement cct 5  
f
C
G
Design value. A monitor pattern on a wafer is tested.  
C
8
D
SEIKO NPC CORPORATION —5  
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