CF5015 series
Electrical Characteristics
2.5V operation (CF5015AL×/CF5015BL×)
V
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
1.95
0.ꢀ
–
Parameter
Symbol
Condition
Unit
min
1.65
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.25V, I = 4mA
DD OH
V
V
OH
V
Q: Measurement cct 1, V = 2.25V, I = 4mA
DD OL
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
0.ꢀV
V
IL
DD
V
V
= V
= V
–
10
10
11
8
ꢁA
ꢁA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
ꢁA
MΩ
kΩ
kΩ
pF
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
–
OL
SS
CF5015AL1
CF5015AL2
CF5015ALꢀ
CF5015AL4
CF5015AL5
CF5015BL1
CF5015BL2
CF5015BLꢀ
CF5015BL4
CF5015BL5
–
5.5
4
–
–
ꢀ
6
–
2.5
2
5
–
4
Measurement cct ꢀ, load cct 1,
INHN = open, C = 15pF, f = 60MHz
Current consumption
I
DD
L
–
4.5
ꢀ
9
–
6
–
2
4
–
1.5
1
ꢀ
–
2
Standby current
I
Measurement cct ꢀ, INHN = LOW
Measurement cct 4
–
–
ꢀ
ST
R
2
6
12
200
600
20.7
4.6
20.7
9.2
UP1
INHN pull-up resistance
Feedback resistance
R
20
100
15.ꢀ
ꢀ.4
15.ꢀ
6.8
100
ꢀ00
18
4
UP2
R
Measurement cct 5
f
CF5015AL×
CF5015BL×
CF5015AL×
CF5015BL×
Design value. A monitor pattern on a
wafer is tested.
C
G
pF
Built-in capacitance
18
8
pF
Design value. A monitor pattern on a
wafer is tested.
C
D
pF
SEIKO NPC CORPORATION —4
NPC [ NIPPON PRECISION CIRCUITS INC ]
