Nexperia
PMV37ENE
60 V, N-channel Trench MOSFET
aaa-029372
aaa-029373
15
3
2
1
0
I
a
D
(A)
10
5
0
T = 175 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-029374
aaa-022669
3
4
10
C
iss
V
GS(th)
(V)
C
(pF)
3
2
10
C
C
oss
max
2
rss
10
typ
1
min
0
-60
1
-1
10
2
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
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PMV37ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
8 / 15
NEXPERIA [ Nexperia ]
