Nexperia
PMV37ENE
60 V, N-channel Trench MOSFET
aaa-022662
aaa-022663
-3
-4
-5
-6
16
10
D
3.2 V
I
D
I
(A)
(A)
12
8
10 V
4.5 V
3.4 V
min
typ
max
10
3.0 V
2.8 V
10
10
4
V
= 2.5 V
GS
4
0
0
1
2
3
5
0
1
2
3
V
(V)
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 10 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-022664
aaa-029371
180
200
R
DSon
(mΩ)
2.5 V
2.8 V
3 V
3.2 V
R
DSon
(mΩ)
150
150
120
90
60
30
0
100
50
0
3.4 V
T = 175 °C
j
4.5 V
T = 25 °C
j
V
= 10 V
GS
0
4
8
12
16
0
2
4
6
8
10
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 3.1 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMV37ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
7 / 15
NEXPERIA [ Nexperia ]
