PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
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1
1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−2
−3
10
10
(1)
(2)
(1)
(2)
(3)
(3)
−2
10
10
10
−3
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
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3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
1
1
(1)
(2)
(3)
(1)
(2)
(3)
−1
−1
10
10
−2
10
−2
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
I
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
8 of 15
NEXPERIA [ Nexperia ]
