PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
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1000
14
I
C
h
FE
(A)
12
I
B
(mA) = 300
800
270
240
210
180
10
8
(1)
(2)
150
120
600
400
200
0
90
60
6
30
(3)
4
2
0
−1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
CE
(V)
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
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1.2
1.2
V
(V)
V
BEsat
(V)
BE
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
7 of 15
NEXPERIA [ Nexperia ]
