RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical reverse recovery time vs. dI /dt
Fig.6 Typical recovery current vs. dI /dt
F
F
100
80
25
20
15
I
I
I
= 30 A
= 15 A
= 5 A
V
T
= 200 V
= 125 °С
= 25 °С
F
F
F
R
J
J
T
60
40
20
I
I
I
= 30 A
= 15 A
= 5 A
F
F
F
10
5
0
V
T
= 200 V
= 125 °С
= 25 °С
R
J
J
T
0
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig.8 Typical dI
/dt vs. dI /dt
(rec)M
Fig.7 Typical Stored Charge vs. dI /dtI
F
F
10000
800
600
400
V
T
= 200 V
= 125 °С
= 25 °С
R
I
I
I
= 30 A
J
J
F
T
= 15 A
F
= 5 A
F
I
= 30 A
= 15 A
= 5 A
F
F
F
I
I
1000
200
0
V
T
= 200 V
R
= 125 °С
= 25 °С
J
J
T
100
1000
100
1000
100
dI /dt (A/µs)
F
dIF/dt (A/µs)
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
Ω
0.01
L = 70 µH
D.U.T.
D
dI /dt
F
adjust
IRFP250
G
S
Page 4 of 6
www.nellsemi.com
NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
