2SK3402
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1000
100
10
30
Pulsed
Pulsed
25
20
V
GS = 4.0 V
10 V
V
GS = 10 V
15
10
V
GS = 0 V
1
5
0
I
D
= 18 A
150
ch - Channel Temperature - ˚C
0.1
0
0.5
1.0
1.5
−50
0
50
100
V
F(S-D) - Body Diode Forward Voltage - V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
1000
V
GS = 0 V
t
r
f = 1 MHz
t
f
Ciss
t
d(off)
100
10
1
t
d(on)
C
oss
rss
C
100
10
0.1
1
10
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
16
80
70
µ
di/dt = 100 A/ s
GS = 0 V
V
14
12
10
V
DD = 48 V
30 V
60
50
V
GS
12 V
8
6
4
2
40
30
V
DS
10
1
20
10
0
I
D
= 36 A
0.1
1
10
100
0
10 20 30
40
50 60
70 80
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
5
Data Sheet D14473EJ3V1DS
NEC [ NEC ]
