2SK3402
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
Pulsed
DRAIN TO SOURCE VOLTAGE
200
160
100
10
Pulsed
T
A
= −55˚C
25˚C
120
80
75˚C
V
GS = 10 V
1
0.1
150˚C
4.0 V
40
0
V
DS = 10 V
5
0.01
0
1
2
3
4
6
1
2
3
4
VDS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
100
10
V
DS = 10 V
Pulsed
40
30
T
A
= 150˚C
75˚C
25˚C
1
0.1
−55˚C
20
10
0
I
D
= 18 A
0.01
0.01
0
2
4
6
8
10 12 14 16 18 20
0.1
I
1
10
100
VGS - Gate to Source Voltage - V
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
40
35
V
DS = 10 V
= 1 mA
Pulsed
I
D
2.5
30
2.0
1.5
1.0
25
20
15
10
5
V
GS = 4.0 V
10 V
100
0.5
0
0
1
10
1000
−50
0
50
100
150
ID - Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet D14473EJ3V1DS
NEC [ NEC ]
