2SK3402
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 60 V, VGS = 0 V
10
±10
2.5
µA
µA
V
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
VGS = 4.0 V, ID = 18 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
13
2.0
27
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
12
15
22
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
3200
520
270
36
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 30 V, ID = 18 A
VGS = 10 V
310
170
180
61
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 48 V
QGS
QGD
VF(S-D)
trr
VGS = 10 V
8.2
17
ID = 36 A
Note
Body Diode Forward Voltage
IF = 36 A, VGS = 0 V
IF = 36 A, VGS = 0 V
di/dt = 100 A/µs
1.0
48
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Qrr
89
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
50 Ω
V
GS
R
L
90%
90%
PG.
GS = 20 → 0 V
V
GS
V
GS
10%
V
DD
Wave Form
0
RG
V
PG.
V
DD
90%
I
D
BVDSS
I
D
I
AS
V
0
GS
10%
10%
I
D
0
V
DS
Wave Form
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
τ
t
on
t
off
τ = 1 s
µ
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D14473EJ3V1DS
NEC [ NEC ]
