2SK2510
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
40
100
10
1
30
20
V
GS = 4 V
V
GS = 10 V
V
GS = 0
10
0
0.1
I
D
= 20 A
150
ch - Channel Temperature - ˚C
0
0
–50
1.5
0.5
1.0
100
50
T
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100 000
10 000
1 000
100
V
GS = 0
f = 1 MHz
t
d(off)
t
f
t
r
t
d(on)
Ciss
1 000
100
10
C
oss
V
= 30 V
DD = 10 V
RGS
= 10 Ω
Crss
V
G
1.0
0.1
1
10
100
0.1
1.0
10
100
VDS - Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1 000
100
16
14
12
10
8
80
60
40
20
di/dt = 100 A/µs
V
GS = 0
I = 40 A
D
V
DD = 12 V
30 V
48 V
V
GS
V
DS
6
10
4
2
1.0
0.1
0
1.0
10
100
0
20
40
60
80
I
D
- Drain Current - A
Qg - Gate Charge - nC
5
NEC [ NEC ]
