2SK2510
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
Rth(ch-a) = 62.5 ˚C/W
1
R
th(ch-c) = 3.57 ˚C/W
0.1
0.01
Single Pulse
0.001
100
10
µ
µ
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1000
100
10
Pulsed
V
DS = 10 V
Pulsed
60
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
40
20
I = 20 A
D
1
1
10
100
1 000
0
2
10
20
30
I
D
- Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
80
60
40
Pulsed
VDS = 10 V
I = 1 mA
D
1
0
V
GS = 4 V
20
0
VGS = 10 V
1.0
10
- Drain Current - A
100
–50
0
50
100
150
I
D
Tch - Channel Temperature - ˚C
4
NEC [ NEC ]
