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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
MPR Register Address Definition  
The following table provide an overview of the available data location, how they are addressed by MR3 A[1:0] during a MRS  
to MR3, and how their individual bits are mapped into the burst order bits during a Multi Purpose Register Read.  
MPR MR3 Register Definition  
Burst  
Length  
Read Address  
A[2:0]  
MR3 A[2]  
MR3 A[1:0]  
Function  
Burst Order and Data Pattern  
Burst order 0,1,2,3,4,5,6,7  
Pre-defined Data Pattern [0,1,0,1,0,1,0,1]  
Burst order 0,1,2,3  
BL8  
BC4  
BC4  
000  
000  
100  
Read  
Predefined  
Pattern for  
System  
1
00  
Pre-defined Data Pattern [0,1,0,1]  
Burst order 4,5,6,7  
Calibration  
Pre-defined Data Pattern [0,1,0,1]  
Burst order 0,1,2,3,4,5,6,7  
BL8  
BC4  
BC4  
BL8  
BC4  
BC4  
BL8  
BC4  
BC4  
000  
000  
100  
000  
000  
100  
000  
000  
100  
1
1
1
01  
10  
11  
RFU  
RFU  
RFU  
Burst order 0,1,2,3  
Burst order 4,5,6,7  
Burst order 0,1,2,3,4,5,6,7  
Burst order 0,1,2,3  
Burst order 4,5,6,7  
Burst order 0,1,2,3,4,5,6,7  
Burst order 0,1,2,3  
Burst order 4,5,6,7  
Note: Burst order bit 0 is assigned to LSB and the burst order bit 7 is assigned to MSB of the selected MPR agent.  
ACTIVE Command  
The ACTIVE command is used to open (or activate) a row in a particular bank for subsequent access. The value on the  
BA0-BA2 inputs selects the bank, and the addresses provided on inputs A0-A15 selects the row. These rows remain active  
(or open) for accesses until a precharge command is issued to that bank. A PRECHARGE command must be issued before  
opening a different row in the same bank.  
Version 2.3  
02/2017  
48  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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