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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
tMOD Timing  
CK  
CK  
Non  
MRS  
CMD  
ADDR  
CKE  
MRS  
VAL  
NOP  
NOP  
NOP  
NOP  
tMOD  
VAL  
VAL  
Old Setting  
New Setting  
Updating Setting  
Programming the Mode Registers (Cont’d)  
The mode register contents can be changed using the same command and timing requirements during normal operation as  
long as the DRAM is in idle state, i.e. all banks are in the precharged state with tRP satisfied, all data bursts are completed  
and CKE is high prior to writing into the mode register. The mode registers are divided into various fields depending on the  
functionality and/or modes.  
Mode Register MR0  
The mode-register MR0 stores data for controlling various operating modes of DDR3 (L) SDRAM. It controls burst length,  
read burst type, CAS latency, test mode, DLL reset, WR, and DLL control for precharge Power-Down, which include  
various vendor specific options to make DDR3(L) SDRAM useful for various applications. The mode register is written by  
asserting low on , RA, A, WE, BA0, BA1, and BA2, while controlling the states of address pins according to the  
following figure.  
Version 2.3  
02/2017  
17  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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