欢迎访问ic37.com |
会员登录 免费注册
发布采购

NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
 浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第42页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第43页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第44页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第45页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第47页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第48页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第49页浏览型号NT5CB128M16JR-DIH的Datasheet PDF文件第50页  
NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
READ Timing Definitions  
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.  
Rising data strobe edge parameters:  
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, .  
tDQSCK is the actual position of a rising strobe edge relative to CK, .  
tQSH describes the DQS,  differential output high time.  
tDQSQ describes the latest valid transition of the associated DQ pins.  
tQH describes the earliest invalid transition of the associated DQ pins.  
Falling data strobe edge parameters:  
tQSL describes the DQS,  differential output low time.  
tDQSQ describes the latest valid transition of the associated DQ pins.  
tQH describes the earliest invalid transition of the associated DQ pins.  
tDQSQ; both rising/falling edges of DQS, no tAC defined.  
READ Timing Definition  
Version 1.4  
05/2019  
46  
Nanya Technology Cooperation ©  
All Rights Reserved.  
 复制成功!