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NT5DS4M32EG-6 参数 Datasheet PDF下载

NT5DS4M32EG-6图片预览
型号: NT5DS4M32EG-6
PDF下载: 下载PDF文件 查看货源
内容描述: 1M 】 32位】 4银行双数据速率同步RAM采用双向数据选通和DLL [1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 46 页 / 1048 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NT5DS4M32EG  
NanoAmp Solutions, Inc.  
Advance Information  
Mode Register Set (MRS)  
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs /CAS  
latency, address mode, burst length, test mode, DLL reset and various vendor specific option to make DDR SDRAM  
useful for variety of different applications. The default value of the mode register is not defined, therefore the mode  
register must be written after EMRS setting for proper operation. The mode register is written by asserting low on /CS,  
/RAS, /CAS and WE (The DDR SDRAM should be in active mode with CKE already high prior to writing into the mode  
register). The state of address pins A0 ~ A11 and BA0,BA1 in the same cycle as /CS, /RAS, /CAS and /WE going low  
is written in the mode register. Minimum two clock cycles are requested to complete the write operation in the mode  
register. The mode register contents can be changed using the same command and clock cycle requirements during  
operation as long as all banks are in the idle state. The mode register is divided into various fields depending on  
functionality. The burst length uses A0~A2, address mode uses A3, /CAS latency (read latency from column address)  
uses A4 ~ A6. A7 is used for test mode. A8 is used for DLL for DLL reset. A7, A8, BA0, and BA1 must be set to low for  
normal MRS operation. Refer to the table for specific codes for various burst length, address modes and /CAS  
latencies.  
Address Bus  
BA1  
RFU  
BA0  
0
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Mode  
Register  
RFU  
DLL  
TM  
/CAS Latency  
BT  
Burst Length  
Burst Type  
A3  
Type  
DLL  
Test Mode  
0
1
Sequential  
Interleave  
A8  
0
DLL Reset  
No  
A7  
0
Mode  
Normal  
Test  
1
Yes  
1
Burst Length  
/CAS Latency  
Burst Type  
A2  
A1  
A0  
BA0  
0
Mode  
A6  
0
A5  
0
A4  
0
Latency  
Sequential  
Interleave  
Reserved  
2
MRS  
Reserved  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
2
1
EMRS  
0
0
1
Reserved  
2
0
1
0
4
4
0
1
1
3
8
8
Reserved  
Reserved  
1
0
0
Reserved  
Reserved  
Reserved  
Full page  
Reserved  
Reserved  
Reserved  
Reserved  
* RFU(Reserved for future use)  
should stay “0” during MRS cycle.  
1
0
1
1
1
0
Reserved  
Reserved  
1
1
1
Figure 5: MRS Cycle  
1
2
3
4
5
6
7
8
0
/CK  
CK  
Precharge  
All Banks  
Any  
Command  
1
Command  
NOP  
NOP  
NOP  
MRS *  
NOP  
NOP  
NOP  
tRP * 2  
tMR D = 2 tCK  
* 1 : MRS can be issued only at all banks precharge state.  
* 2 : Minium tRP is required to issue MRS command.  
Doc # 14-02-045 Rev A ECN 01-1118  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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