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NT5DS4M32EG-6 参数 Datasheet PDF下载

NT5DS4M32EG-6图片预览
型号: NT5DS4M32EG-6
PDF下载: 下载PDF文件 查看货源
内容描述: 1M 】 32位】 4银行双数据速率同步RAM采用双向数据选通和DLL [1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 46 页 / 1048 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NT5DS4M32EG  
NanoAmp Solutions, Inc.  
Advance Information  
Burst Interruption  
Read Interrupted by Read  
Burst Read can be interrupted before completion of the burst by new Read command of any bank. When the  
previous burst is interrupted, the remaining address are overridden by the new address with the full burst length. The  
data from the previous Read command continues to appear on the outputs until the /CAS latency from the interrupting  
Read command is satisfied. Read to Read interval is minimum 1 tCK.  
Figure 10: Burst Interrupted by Read (Burst length = 4, /CAS Latency = 3)  
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0
1
2
3
4
5
6
7
/CK  
CK  
READ A  
READ B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
Command  
DQS  
/CAS Latency = 3  
Douta0 Douta1 Doutb0 Doutb1 Doutb2 Doutb3  
DQ’s  
Read Interrupted by Burst stop & Write  
To interrupt Burst Read with a write command, Burst stop command must be asserted to avoid data contention on  
the I/O bus by placing the DQ’s(Output drivers) in a high impedance state at least one clock cycle before the Write  
Command is initiated. Once the burst stop command has been issued, the minimum delay to a write command is  
CL(RU). [CL is /CAS Latency and RU means round up to the nearest integer.]  
Figure 11: Burst Interrupted by Burst Stop & Write (Burst Length = 4, /CAS Latency = 3)  
8
0
1
2
3
4
5
6
7
/CK  
CK  
Burst  
stop  
READ  
NOP  
NOP  
NOP  
WRITE  
NOP  
NOP  
Command  
tDQSS  
tWPREH  
tRPRE  
DQS  
/CAS Latency = 3  
Preamble  
tWPRES  
Dout0 Dout1  
Din 0 Din 1 Din 2 Din 3  
DQ’s  
Doc # 14-02-045 Rev A ECN 01-1118  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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