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N64T1618C1BZ-70I 参数 Datasheet PDF下载

N64T1618C1BZ-70I图片预览
型号: N64T1618C1BZ-70I
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 18 页 / 348 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N64T1618C1B  
NanoAmp Solutions, Inc.  
Advance Information  
Figure 1: Functional Block Diagram  
Page  
Address  
Inputs  
Address  
Decode  
Logic  
A - A  
4
21  
4096K x 16  
Memory  
Array  
Input/  
Output  
Word  
I/O - I/O  
Mux  
and  
Buffers  
Address  
Inputs  
0
7
Address  
Decode  
Logic  
A - A  
0
3
I/O - I/O  
8
15  
CE  
WE  
Control  
Logic  
OE  
UB  
LB  
ZZ  
Table 2: Functional Description  
I/O1  
CE  
H
L
WE  
X
OE  
UB/LB  
ZZ  
H
MODE  
POWER  
Standby  
Active  
Standby2  
Write  
X
X3  
L
X
L1  
L1  
L
High Z  
Data In  
Data Out  
High Z  
L
H
L
H
H
Read  
Active  
Active  
Standby4  
L
H
H
H
L
H
L
X
X
X
X
X
L
L
High-Z  
High-Z  
Set register  
Deep Sleep  
Active  
Deep Sleep  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - IO7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE), address inputs and data input/outputs are internally isolated from  
any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Table 3: Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
6
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
6
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23403- Rev A 01/05  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
2