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N08T1630C2BT2-70 参数 Datasheet PDF下载

N08T1630C2BT2-70图片预览
型号: N08T1630C2BT2-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Ball Grid Array Package  
N08T1630CxB  
0.23±0.05  
0.90±0.10  
D
A1 BALL PAD  
CORNER (3)  
1. 0.30±0.05 DIA.  
E
2. SEATING PLANE - Z  
0.15  
Z
0.08  
Z
TOP VIEW  
SIDE VIEW  
1. DIMENSION IS MEASURED AT THE  
MAXIMUM SOLDER BALL DIAMETER.  
PARALLEL TO PRIMARY Z.  
A1 BALL PAD  
CORNER  
SD  
2. PRIMARY DATUM Z AND SEATING  
PLANE ARE DEFINED BY THE  
SPHERICAL CROWNS OF THE  
SOLDER BALLS.  
e
SE  
3. A1 BALL PAD CORNER I.D. TO BE  
MARKED BY INK.  
K TYP  
J TYP  
e
BOTTOM VIEW  
Dimensions (mm)  
e = 0.75  
BALL  
D
E
MATRIX  
TYPE  
SD  
SE  
J
K
6±0.10  
8±0.10  
0.375  
0.375  
1.125  
1.375  
FULL  
(DOC# 14-02-004 REV H ECN# 01-1102)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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