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N08T1630C2BT2-70 参数 Datasheet PDF下载

N08T1630C2BT2-70图片预览
型号: N08T1630C2BT2-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Functional Block Diagram  
N08T1630CxB  
Address  
Address  
Input/  
512K  
Decode  
Inputs  
Output  
x 16 bit  
RAM Array  
Logic  
I/O0 - I/O7  
Mux  
A0 - A18  
and  
Buffers  
I/O8 - I/O15  
CE1  
CE2  
Control  
Logic  
WE  
OE  
UB  
LB  
Functional Description  
2
CE21  
CE1  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby3  
Standby3  
Standby3  
Write  
H
X
L
L
L
L
X
L
X
X
X
L
X
X
X
X4  
L
X
X
X
X
High Z  
High Z  
Standby  
Standby  
Standby  
Active  
H
H
H
H
H
H
High Z  
L2  
L2  
L2  
L2  
L2  
L2  
Data In  
Data Out  
High Z  
H
H
Active  
Read  
Active  
H
Active  
1. CE2 only applies to BGA package.  
2. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
(DOC# 14-02-004 REV H ECN# 01-1102)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
2