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!Note
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C02E.pdf
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sales representatives or product engineers before ordering.
• This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
GRM Series Specifications and T st Methods (1) (Note 1)-Typical Inspection
GRM Series Specifications and Test Methods (1) (Note 1)-Typical Inspection
(Note 1) These Specifications and Test Methods indicate typical inspection.
Please refer to individual specifications (our product specifications or the approval sheet).
When no "*" is added in PNs table, please refer to GRM Series Specifications and Test Methods (1).
Continued from the preceding page.
When "*" is added in PNs table, please refer to GRM Series Specifications and Test Methods (2).
Specifications
No.
Item
Temperature
Compensating Type
Test Method
High Dielectric Type
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
No defects or abnormalities
B1, B3, R1, R6, R7, C8:
Capacitance Within ±2.5% or ±0.25pF
Change
Within ±7.5%
(whichever is larger)
F1, F5, E4: Within ±20%
[B1, B3, R6, R7, C8]
W.V.: 100V
Preheat the capacitor at 120 to 150°C for 1 minute.
:
0.025 max. (CF0.068µF) Immerse the capacitor in a eutectic solder or Sn-3.0Ag-0.5Cu
: 0.05 max. (CU0.068µF) solder solution at 270±5°C for 10±0.5 seconds. Set at room
W.V.: 50/35/25V:
temperature for 24±2 hours, then measure.
: 0.025 max.*
GRM32D R7/R6/C8 1E106: 0.035 max.
•Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/–10°C for one hour and
then set at room temperature for 24±2 hours.
Perform the initial measurement.
Resistance
to
Soldering
Heat
*
30pF and over: QU1000
30pF and below:
QU400+20C
W.V.: 16/10V: 0.035 max.
W.V.: 6.3/4V
: 0.05 max. (CF3.3µF)
: 0.1 max. (CU3.3µF)
[E4]
W.V.: 25Vmin: 0.025 max.
[F1, F5]
W.V.: 25V min.
14
Q/D.F.
•Preheating for GRM32/43/55
C: Nominal Capacitance (pF)
Step
1
2
Temperature
100 to 120°C
170 to 200°C
Time
1 min.
1 min.
: 0.05 max. (CF0.1µF)
: 0.09 max. (CU0.1µF)
W.V.: 16/10V: 0.125 max.
W.V.: 6.3V: 0.15 max.
I.R.
More than 10,000MΩ or 500Ω · F (whichever is smaller)
Dielectric
Strength
No defects
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance
No defects or abnormalities
B1, B3, R1, R6, R7, C8:
Within ±2.5% or ±0.25pF
Capacitance
Change
Within ±7.5%
(whichever is larger)
F1, F5, E4: Within ±20%
[B1, B3, R6, R7, C8]
W.V.: 100V
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as (10).
Perform the five cycles according to the four heat treatments
shown in the following table.
:
0.025 max. (CF0.068µF)
: 0.05 max. (CU0.068µF)
W.V.: 50/35/25V:
Set for 24±2 hours at room temperature, then measure.
: 0.025 max.*
Step
1
2
3
4
*
GRM32D R7/R6/C8 1E106: 0.035 max.
Temperature
Cycle
Min.
Max.
Operating
Temp. +3/–0
30pF and over: QU1000
30pF and below:
QU400+20C
W.V.: 16/10V: 0.035 max.
W.V.: 6.3/4V
: 0.05 max. (CF3.3µF)
: 0.1 max. (CU3.3µF)
[E4]
W.V.: 25Vmin: 0.05 max.
[F1, F5]
W.V.: 25V min.
15
Room
Temp.
Room
Temp.
Temp. (°C) Operating
Temp. +0/–3
Q/D.F.
Time (min.)
30±3
2 to 3
30±3
2 to 3
C: Nominal Capacitance (pF)
•Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/–10°C for one hour and
then set at room temperature for 24±2 hours.
Perform the initial measurement.
: 0.05 max. (CF0.1µF)
: 0.09 max. (CU0.1µF)
W.V.: 16/10V: 0.125 max.
W.V.: 6.3V: 0.15 max.
I.R.
More than 10,000MΩ or 500Ω · F (whichever is smaller)
Dielectric
Strength
No defects
Continued on the following page.
54
MURATA [ muRata ]
