MP5016 – 2.7 - 15V, 0.7 - 5A, PROGRAMMABLE, CURRENT-LIMITED SWITCH
ELECTRICAL CHARACTERISTICS
VCC = 5V, RLIMIT = NS, COUT = 10µF, TJ = -40°C + 125°C (6), typical value is tested at TJ = +25°C unless
otherwise noted.
Parameter
Symbol
Condition
Min
Typ
Max Units
Supply Current
EN = high, MODE =
VCC/GND/float
EN = high, MODE connect
resistor to GND
50
μA
Supply current (quiescent)
IQ
IS
90
9
μA
μA
Supply current (shutdown)
EN = GND
Power MOSFET
On resistance
RDSon
Tdelay
IOFF
IOUT = 1A
43
500
0.1
mΩ
Turn-on delay
DV/DT float, MODE float
VIN = 12V, EN = 0V
μs
Off-state leakage current
1
μA
Under-/Over-Voltage Protection (UVP, OVP)
Under-voltage lockout rising
threshold
VUVLO
2.38
2.53
2.68
V
UVLO hysteresis
VUVLOHYS
200
5.75
15.2
mV
V
VMODE = GND, TJ = 25°C
VMODE = VCC, TJ = 25°C
5.5
6
14.2
16.2
V
Output over-voltage clamp
voltage
RMODE = 76.8kΩ, VCC = 5V,
TJ = 25°C
VCLAMP
3.71
3.95
4.19
V
RMODE = 115kΩ, TJ = 25°C
RMODE = 324kΩ, TJ = 25°C
5.3
5.7
6.1
V
V
14.2
15.5
16.7
DV/DT
DV/DT float, VMODE = GND
DV/DT float, VMODE = VCC
DV/DT float, MODE float
VDV/DT = 0.5V
0.4
1.3
2.8
4.5
0.8
2
1.2
2.7
4.8
8.5
DV/DT slew rate
dv/dt
IDV/DT
V/ms
3.8
6.5
DV/DT current
μA
Current Limit
Float ILIMIT, TJ = 25°C
RLIMIT = 604Ω, TJ = 25°C
RLIMIT = 3kΩ, TJ = 25°C
2.3
3.3
0.6
2.5
3.5
2.7
3.7
0.9
A
A
A
Current limit at normal
operation
ILimit_NO
0.75
Enable (EN)
Enable rising threshold
Enable hysteresis
Enable pull-down resistor
GATE
VEN_RISING
VEN_HYS
1.86
2
2.16
V
350
2.2
mV
MΩ
REN_DOWN
GATE maximum source
current
IG_SOURCE_MAX IOUT = 1A
VCC = VSOURCE = 5V,
7
12
μA
GATE maximum sink
current
IG_SINK_MAX
1.3
mA
VGATE = 10.5V
Output Discharge
Discharge resistance
RDIS
VCC = 5V
540
Ω
MP5016 Rev.1.0
www.MonolithicPower.com
4
6/20/2017
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