Bipolar High fT Low Voltage NPN Silicon Transistors
Typical Performance Curves (Cont’
d)
NOMINAL COLLECTOR-BASE
CAPACITANCE (C
OB
) vs COLLECTOR-
BASE VOLTAGE (MP4T324335)
COLLECTOR-BASE CAPACITANCE
(pF)
1
0.9
0.8
0.7
0.6
2
0
1
1
COLLECTOR-BASE VOLTAGE (Volts)
10
0.5
0.4
GAIN (dB)
MP4T3243 Series
V4.00
NOMINAL GAIN vs FREQUENCY at V
CE
= 3
VOLTS AND I
C
= 20 mA (MP4T324335)
12
10
8
6
4
GTU (MAX)
|S
21E
|2
10
FREQUENCY (GHz)
NOMINAL GAIN vs COLLECTOR CURRENT
at f=1 GHz and V
CE
= 3 VOLTS
(MP4T324335)
13
12
11
GAIN (dB)
10
9
8
7
6
5
4
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
NOMINAL GAIN vs COLLECTOR CURRENT
AT f=2 GHz and V
CE
= 3 VOLTS
(MP4T324335)
10
9
8
7
GAIN (dB)
6
5
4
3
2
1
0
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
GTU (MAX)
MAG
NOMINAL GAIN BANDWIDTH PRODUCT
(f
T
) vs COLLECTOR CURRENT at V
CE
= 3
and 5 VOLTS (MP4T324335)
GAIN BANDWIDTH PRODUCT (GHz)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1
10
COLLECTOR CURRENT (mA)
100
3 VOLTS
5 VOLTS
DC CURRENT GAIN
NOMINAL DC CURRENT GAIN (h
FE
) vs
COLLECTOR CURRENT at V
CE
= 3 VOLTS
(MP4T324335)
120
110
100
90
80
70
60
50
0
20
40
60
80
100
COLLECTOR CURRENT (mA)
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
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5
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