Bipolar High fT Low Voltage NPN Silicon Transistors
Typical Scattering Parameters in the Micro-X Package (Cont’
d)
MP4T324335
V
CE
= 3 Volts, I
C
= 40 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.675
0.692
0.707
0.719
0.749
0.763
S11E
Angle
164
143
121
104
86
66
Mag.
2.678
1.528
1.230
1.095
1.035
1.017
S21E
Angle
73.3
54.1
37.7
20.8
6.5
-7.8
Mag.
0.139
0.244
0.368
0.463
0.537
0.629
S12E
Angle
66.2
55.0
45.9
31.5
20.4
8.4
MP4T3243 Series
V4.00
S22E
Mag
0.424
0.470
0.455
0.481
0.504
0.523
Angle
176.6
158.6
141.6
128.1
113.3
99.2
MP4T324335
V
CE
= 3 Volts, I
C
= 60 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.685
0.698
0.719
0.727
0.754
0.767
S11E
Angle
164
143
122
104
86
67
Mag.
2.678
1.528
1.245
1.103
1.045
1.025
S21E
Angle
73.1
54.2
37.7
20.7
6.5
-7.9
Mag.
0.140
0.251
0.380
0.474
0.549
0.641
S12E
Angle
68.1
56.1
45.6
31.0
19.8
7.4
Mag
0.446
0.492
0.480
0.502
0.520
0.540
S22E
Angle
173.9
156.8
139.4
125.4
110.6
96.0
Typical Performance Curves
DC SAFE OPERATING RANGE at 25°
c
TOTAL POWER DISSIPATION (mW)
NOMINAL POWER DERATING CURVES
1000
900
800
700
600
500
400
300
200
100
0
-25
200
COLLECTOR CURRENT (mA)
110
100
80
50
MP4T324300 CHIP
ON 25° HEAT SINK
C
MP4T324300 CHIP
ON 25° HEAT SINK
C
MP4T324335 MICRO-X
MP4T324335 MICRO-X
20
MP4T324333 SOT-23
10
0
2
4
COLLECTOR EMITTER VOLTAGE (Volts)
6
MP4T324333 SOT-23
0
25
50
75
100
125
150
175
200
AMBIENT TEMP (C)
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440