Bipolar High fT Low Voltage NPN Silicon Transistors
Electrical Specifications @ +25°
C
MP4T3243 Series
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Condition
V
CB
= 4 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 3 volts
I
C
= 20 mA
V
CB
= 3 volts
I
E
= 0
µA
f = 1 MHz
C
OB
0.8
h
FE
20
125
I
EBO
Symbol
I
CBO
Min
Typical
MP4T3243 Series
V4.00
Max
10
1
250
1.0
Units
µA
µA
pF
Typical Scattering Parameters in the MIcro-X Package
MP4T324335
V
CE
= 3 Volts, I
C
= 10 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.647
0.666
0.694
0.714
0.748
0.772
S11E
Angle
172
149
128
109
90
70
Mag.
2.480
1.408
1.135
1.005
0.948
0.930
S21E
Angle
73.2
51.2
34.1
17.3
4.0
-9.1
Mag.
0.137
0.225
0.336
0.427
0.507
0.605
S12E
Angle
51.4
49.0
43.8
32.1
22.8
11.8
Mag
0.311
0.365
0.366
0.412
0.453
0.499
S22E
Angle
-165.8
172.5
156.0
142.1
127.2
111.9
MP4T324335
V
CE
= 3 Volts, I
C
= 20 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
Mag.
0.661
0.677
0.697
0.715
0.744
0.762
S11E
Angle
168
146
125
107
89
69
Mag.
2.632
1.493
1.210
1.067
1.007
0.990
S21E
Angle
73.3
53.1
36.5
19.3
5.4
-8.5
Mag.
0.137
0.238
0.359
0.451
0.525
0.619
S12E
Angle
60.8
53.0
44.8
31.0
20.7
9.1
Mag
0.373
0.421
0.415
0.450
0.480
0.510
S22E
Angle
178.5
161.3
144.6
130.3
115.5
101.6
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
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3
Tel (408) 432-1480
Fax (408)) 432-3440