Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors
MP4T243 Series
V3.00
Typical Performance Curves (Cont’
d)
NOMINAL GAIN BANDWIDTH PRODUCT (f
T
) vs
COLLECTOR CURRENT at V
CE
= 8 and 12 VOLTS
(MP4T24335)
8
7
GAIN BANDWIDTH
PRODUCT in GHz
MAG
NOMINAL GAIN vs COLLECTOR CURRENT at
F = 2 GHz and V
CE
= 12 VOLTS (MP4T24335)
16
14
12
GAIN (dB)
10
8
6
|S
21E
|2
4
2
0
1
10
COLLECTOR CURRENT (mA)
100
GTU (MAX)
6
5
4
3
2
1
1
12 VOLTS
8 VOLTS
10
COLLECTOR CURRENT (mA)
100
NOMINAL DC CURRENT GAIN (h
FE
) vs COLLECTOR
CURRENT at V
CE
= 8 VOLTS (MP4T24335)
ASSOCIATD
GAIN (dB)
120
110
DC CURRENT GAIN
100
90
80
70
60
50
0
20
40
60
80
100
COLLECTOR CURRENT (mA)
NOMINAL NOISE FIGURE and ASSOCIATED GAIN
vs COLLECTOR CURRENT at 1 GHz and V
CE
= 12
VOLTS (MP4T24335)
18
16
14
12
10
8
6
4
2
0
1
10
COLLECTOR CURRENT (mA)
100
NOISE FIGURE
ASSOCIATED GAIN
NOMINAL OUTPUT POWER at the 1dB
COMPRESSION POINT vs COLLECTOR CURRENT at
F = 1 and 2 GHz, V
CE
= 8 VOLTS (MP4T24335)
40
35
30
P
1dB
(dBm)
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
50
55
COLLECTOR CURRENT (mA)
2 GHz
1 GHz
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
NOISE
FIGURE(dB)
6
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
