Moderate Power High fT NPN Silicon Transistor
Electrical Specifications @ 25°
C
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector Base
Junction Capacitance
Condition
V
CB
= 15 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 8 volts
I
C
= 50 mA
V
CB
= 10 volts
I
E
= 0
µA
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
CB
Min
20
Typical
90
0.60
MP4T243 Series
V2.00
Max
10
1
250
0.08
Units
µA
µA
pF
Typical Scattering Parameters in the MIcro-X Package
MP4T24335
V
CE
= 12 Volts, I
C
= 10 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
S11E
Mag.
0.598
0.612
0.549
0.709
0.794
0.899
1.013
1.108
1.161
1.161
1.161
Angle
-157
177
153
133
115
96
75
53
30
13
13
Mag.
3.610
2.373
1.658
1.355
1.182
1.063
0.973
0.878
0.773
0.677
0.677
S21E
Angle
84.4
64.6
44.2
26.1
9.1
-7.4
-24.0
-41.0
-58.8
-73.2
-73.2
Mag.
0.114
0.127
0.146
0.173
0.207
0.246
0.296
0.360
0.438
0.500
0.500
S12E
Angle
27.6
27.3
29.4
30.9
30.2
27.1
21.5
13.4
2.5
9.2
9.4
Mag
0.378
0.286
0.253
0.269
0.314
0.367
0.439
0.559
0.757
0.949
0.949
S22E
Angle
-73.4
-90.7
-113.2
-138.5
-162.2
170.8
157.0
135.6
116.4
103.4
103.6
V
CE
= 12 Volts, I
C
= 20 mA
Frequency
(MHz)
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
S11E
Mag.
0.574
0.591
0.635
0.696
0.788
0.890
1.018
1.106
1.165
1.147
1.147
Angle
-153
170
147
128
110
51
72
50
27
6
6
Mag.
4.510
2.433
1.777
1.465
1.298
1.180
1.090
1.000
0.875
0.723
0.723
S21E
Angle
90.3
64.3
45.3
27.5
11.1
-5.3
-23.1
-40.9
-60.0
-79.5
-79.5
Mag.
0.103
0.126
0.150
0.181
0.215
0.246
0.285
0.347
0.399
0.485
0.485
S12E
Angle
32.1
30.1
32.9
32.1
29.4
25.8
19.6
12.1
6.3
13.5
13.5
Mag
0.330
0.239
0.205
0.217
0.262
0.301
0.366
0.457
0.625
0.847
0.847
S22E
Angle
-78.0
-100.4
-126.2
-151.3
-169.0
-167.7
156.2
134.3
115.1
101.7
101.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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3
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