Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors
Absolute Maximum Ratings @ 25°
C
MP4T24300
Parameter
Collector-Base Voltage
Emitter-Base Voltage
1
Collector Current
1
Junction Temperature
Storage Temperature
Power Dissipation
1,3
Operating Temperature
2
1
1
MP4T243 Series
V3.00
MP4T24335
Micro-X
25
12
1.5
110
200
-65 to +200
400
150
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
T
STG
P
T
T
CP
Unit
Volts
Volts
Volts
mA
°
C
°
C
mW
°
C
Chip
25
12
1.5
110
200
-65 to +200
1000
150
Collector-Emitter Voltage
1. At 25° case temperature (packaged transistors) or 25° mounting surface temperature (chip transistors).
C
C
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MP4T24300 junction/case is 50°
C/watt nominal.
Electrical Specifications @ 25°
C
MP4T24300
Parameter
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 12 volts
I
C
= 40 mA
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
V
CE
= 12 volts
I
C
= 20 mA
f = 1 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
12 min
8 typ
NF
dB
3 typ
GTU (max)
aB
11 typ
MAG
dB
15 typ
P
1dB
dBm
24 typ
22 typ
24 typ
22 typ
15 typ
10.5 typ
3 typ
11 min
8 typ
Chip
7 typ
MP4T24335
Micro-X
7 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB Compression
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
MPLUSE [ M-PULSE MICROWAVE INC. ]
