Freescale Semiconductor, Inc.
Flash Memory
Programming the Flash EEPROM
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off (t ).
VPROG
8. Read the address location to verify that it has been programmed
• If the location is not programmed, repeat steps 4 through 7 until
the location is programmed or until the specified maximum
number of program pulses has been reached (n )
PP
• If the location is programmed, repeat the same number of pulses
as required to program the location. This provides 100% program
margin.
9. Read the address location to verify that it remains programmed.
10. Clear LAT.
11. If there are more locations to program, repeat steps 2 through 10.
12. Turn off V (reduce voltage on V pin to V ).
FP
FP
DD
The flowchart in Figure 7-1 demonstrates the recommended
programming sequence.
68HC(9)12D60 — Rev 4.0
MOTOROLA
Advance Information
109
Flash Memory
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