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V54C316162V-55 参数 Datasheet PDF下载

V54C316162V-55图片预览
型号: V54C316162V-55
PDF下载: 下载PDF文件 查看货源
内容描述: 200/183/166/143 MHz的3.3伏, 4K刷新超高性能1M ×16 SDRAM 2组X达512Kbit ×16 [200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 21 页 / 306 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V54C316162V  
6.2 Write Interrupted by a Read  
(Burst Length = 4, CAS latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
NOP  
WRITE A  
READ B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 2  
dont care  
dont care  
DIN A  
0
DOUT B  
0
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
1
2
3
t
CK2, I/Os  
CAS latency = 3  
DIN A  
0
dont care  
DOUT B  
3
0
1
2
tCK3, I/Os  
Input data must be removed from the I/Os at least one clock  
cycle before the Read dataAPpears on the outputs to avoid  
data contention.  
7. Burst Write with Auto-Precharge  
Burst Length = 2, CAS latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
WRITE A  
BANK A  
ACTIVE  
NOP  
NOP  
NOP  
tRP  
NOP  
NOP  
NOP  
NOP  
tWR  
DIN A1  
tWR  
DIN A1  
COMMAND  
Auto-Precharge  
CAS latency = 2  
DIN A0  
DIN A0  
I/Os  
*
*
tRP  
CAS latency = 3  
I/Os  
Begin Autoprecharge  
*
Bank can be reactivated after trp  
V54C316162V Rev. 2.9 September 2001  
17  
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