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V436632Y24VXTG-10PC 参数 Datasheet PDF下载

V436632Y24VXTG-10PC图片预览
型号: V436632Y24VXTG-10PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB 144 -PIN UNBUFFERED SODIMM SDRAM ,32M ×64 3.3VOLT [256MB 144-PIN UNBUFFERED SDRAM SODIMM, 32M X 64 3.3VOLT]
分类和应用: 动态存储器
文件页数/大小: 12 页 / 291 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V436632Y24V  
Serial Presence Detect Information  
2
2
A serial presence detect storage device - E PROM -  
is assembled onto the module. Information about the  
module configuration, speed, etc. is written into the  
E PROM device during module production using a se-  
2
rial presence detect protocol (I C synchronous 2-wire  
bus)  
SPD-Table for modules:  
Hex Value  
Byte  
Number  
Function Described  
SPD Entry Value  
-75PC  
80  
-75  
80  
08  
04  
0D  
09  
02  
40  
00  
01  
75  
54  
00  
82  
10  
00  
01  
-10PC  
80  
0
1
Number of SPD bytes  
128  
Total bytes in Serial PD  
256  
08  
08  
2
Memory Type  
SDRAM  
04  
04  
3
Number of Row Addresses (without BS bits)  
Number of Column Addresses ( x16 SDRAM)  
Number of DIMM Banks  
13  
0D  
09  
0D  
09  
4
9
5
2
02  
02  
6
Module Data Width  
64  
0
40  
40  
7
Module Data Width (continued)  
Module Interface Levels  
00  
00  
8
LVTTL  
01  
01  
9
SDRAM Cycle Time at CL=3  
SDRAM Access Time from Clock at CL=3  
Dimm Config (Error Det/Corr.)  
Refresh Rate/Type  
7.5 ns/10.0 ns  
5.4 ns/10.0ns  
none  
75  
A0  
60  
10  
11  
12  
13  
14  
15  
54  
00  
00  
Self-Refresh, 7.8 µs  
x16  
82  
82  
SDRAM width, Primary  
10  
10  
Error Checking SDRAM Data Width  
n/a / x16  
00  
00  
Minimum Clock Delay from Back to Back Ran-  
dom Column Address  
tccd = 1 CLK  
01  
01  
16  
17  
18  
19  
20  
21  
22  
23  
Burst Length Supported  
1, 2, 4 & 8  
4
0F  
04  
06  
01  
01  
00  
0E  
75  
0F  
04  
06  
01  
01  
00  
0E  
A0  
0F  
04  
06  
01  
01  
00  
0E  
A0  
Number of SDRAM Banks  
Supported CAS Latencies  
CS Latencies  
CL = 2 / 3  
CS Latency = 0  
WL = 0  
WE Latencies  
SDRAM DIMM Module Attributes  
SDRAM Device Attributes: General  
Minimum Clock Cycle Time at CAS Latency = 2  
Non Buffered/Non Reg.  
Vcc tol ± 10%  
7.5 ns/10.0 ns &  
Not Supported  
24  
Maximum Data Access Time from Clock for CL  
= 2  
7.5ns/10.0ns &  
Not Supported  
54  
60  
60  
25  
26  
Minimum Clock Cycle Time at CL = 1  
Not Supported  
Not Supported  
00  
00  
00  
00  
00  
00  
Maximum Data Access Time from Clock at CL  
= 1  
27  
28  
Minimum Row Precharge Time  
15 ns / 20 ns  
0F  
0E  
14  
0F  
14  
10  
Minimum Row Active to Row Active Delay tRRD  
14 ns/15 ns/16 ns  
V436632Y24V Rev. 1.2 March 2002  
4
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