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MSM8129JXL-12 参数 Datasheet PDF下载

MSM8129JXL-12图片预览
型号: MSM8129JXL-12
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 120ns, CMOS, CQCC32, LCC-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 9 页 / 303 K
品牌: MOSAIC [ MOSAIC ]
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MSM8129 - 70/85/10/12
Issue 1.0 : February 2000
Military Screening Procedure
Component Screening Flow
for high reliability product is in accordance with Mil-883 method 5004
MB COMPONENT SCREENING FLOW
SCREEN
Visual and Mechanical
Internal visual
Temperature cycle
Constant acceleration
Pre-Burn-in electrical
Burn-in
Final Electrical Tests
Static (dc)
Functional
Switching (ac)
2010 Condition B or manufacturers equivalent
1010 Condition C (10 Cycles,-65
o
C to +150
o
C)
2001 Condition E (Y, only) (30,000g)
Per applicable device specifications at T
A
=+25
o
C
Method 1015,Condition D,T
A
=+125
o
C,160hrs min
Per applicable Device Specification
a) @ T
A
=+25
o
C and power supply extremes
b) @ temperature and power supply extremes
a) @ T
A
=+25
o
C and power supply extremes
b) @ temperature and power supply extremes
a) @ T
A
=+25
o
C and power supply extremes
b) @ temperature and power supply extremes
Calculated at post-burn-in at T
A
=+25
o
C
1014
Condition A
Condition C
2009 Per vendor or customer specification
100%
100%
100%
100%
100%
100%
100%
100%
100%
5%
100%
100%
100%
100%
100%
TEST METHOD
LEVEL
Percent Defective allowable (PDA)
Hermeticity
Fine
Gross
External Visual
8