ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA55H4047M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
out
(W)
2
nd
, 3 HARMONICS versus FREQUENCY
80
-30
-40
HARMONICS (dBc)
-50
-60
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
rd
70
INPUT VSWR
ρ
in
(-)
60
50
40
30
20
10
P
out
70
TOTAL EFFICIENCY
η
T
(%)
60
OUTPUT POWER P
η
T
50
40
30
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
20
10
-70
3
rd
ρ
in
0
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
-80
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
20
16
12
DRAIN CURRENT I
DD
(A)
60
out
(dBm)
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
P
out
Gp
50
POWER GAIN Gp(dB)
Gp
P
out
50
POWER GAIN Gp(dB)
40
30
20
10
0
-10
20
16
12
OUTPUT POWER P
30
20
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
I
DD
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
8
4
0
OUTPUT POWER P
40
I
DD
f=430MHz,
V
DD
=12.5V,
V
GG
=5V
8
4
0
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
60
out
(dBm)
24
P
out
Gp
50
POWER GAIN Gp(dB)
Gp
P
out
20
16
12
50
POWER GAIN Gp(dB)
40
30
20
10
0
-10
-5
0
5
10
I
DD
20
16
12
8
OUTPUT POWER P
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=450MHz,
V
DD
=12.5V,
V
GG
=5V
8
4
0
OUTPUT POWER P
40
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
4
0
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
DRAIN CURRENT I
DD
(A)
f=400MHz,
V
GG
=5V,
P
in
=50m W
P
out
f=430MHz,
V
GG
=5V,
P
in
=50m W
P
out
I
DD
I
DD
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER P
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
OUTPUT POWER P
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
RA55H4047M
25 Jun 2010
3/9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
