ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA55H4047M
RATING
17
6
100
65
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
f=400-470MHz,
Z
G
=Z
L
=50Ω
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
400
55
TYP
-
-
-
-
-
1
MAX
470
-
-
-50
3:1
-
UNIT
MHz
W
%
dBc
—
mA
—
—
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
35
-
-
-
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=55W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or
destroy
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
RA55H4047M
25 Jun 2010
2/9