ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA55H4047M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
16
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=470MHz,
V
GG
=5V,
P
in
=50m W
DRAIN CURRENT I
DD
(A)
I
DD
I
DD
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
90
out
(W)
18
f=430MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
80
70
60
50
40
30
20
10
0
2.5
DRAIN CURRENT I
DD
(A)
OUTPUT POWER P
OUTPUT POWER P
12
I
DD
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
12
10
8
6
4
2
0
10
8
6
4
2
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
out
(W)
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
f=470MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
18
16
DRAIN CURRENT I
DD
(A)
14
I
DD
80
70
60
50
40
30
20
10
0
2.5
OUTPUT POWER P
I
DD
10
8
6
4
2
0
OUTPUT POWER P
12
DRAIN CURRENT I
DD
(A)
f=450MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
16
14
12
10
8
6
4
2
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
RA55H4047M
DRAIN CURRENT I
DD
(A)
f=400MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
16
14
80
70
16
14
DRAIN CURRENT I
DD
(A)
f=450MHz,
V
GG
=5V,
P
in
=50m W
P
out
P
out
24
22
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
OUTPUT POWER P
25 Jun 2010
4/9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
