MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10
3
t
f
t
d(off)
t
d(on)
t
r
Conditions:
V
CC
= 300V
V
GE
=
±15V
I
C
= 200A
T
j
= 125°C
Inductive load
2
3
5 7
10
1
2
3
5 7
10
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10
2
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 5.1Ω
10
1
T
j
= 125°C
7
Inductive load
7
5
3
2
5
3
2
SWITCHING LOSS (mJ/pulse)
SWITCHING TIME (ns)
7
5
3
2
10
2
7
5
3
2
E
off
E
on
E
rr
10
1
7
5
3
2
10
0
7
5
3
2
10
0 0
10
10
–1 1
10
2
3
5 7
10
2
2
3
5 7
10
3
GATE RESISTANCE R
G
(Ω)
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10
3
7
Conditions:
V
CC
= 300V
5
V
GE
=
±15V
3
R
G
= 5.1Ω
T
j
= 25°C
2
Inductive load
I
rr
10
2
t
rr
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10
2
7
5
3
2
SWITCHING LOSS (mJ/pulse)
E
on
7
5
3
2
10
0
7
5
3
2
10
–1 0
10
Conditions:
V
CC
= 300V
V
GE
=
±15V
I
C
, I
E
= 200A
T
j
= 125°C
Inductive load
2
3
5 7
10
1
2
3
E
rr
l
rr
(A), t
rr
(ns)
10
1
E
off
5 7
10
2
10
1 1
10
2
3
5 7
10
2
2
3
5 7
10
3
GATE RESISTANCE R
G
(Ω)
EMITTER CURRENT I
E
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10
0
7
Single pulse
5
T
C
= 25°C
3
2
7
5
3
2
GATE-EMITTER VOLTAGE V
GE
(V)
I
C
= 200A
V
CC
= 200V
15
V
CC
= 300V
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j–c)
10
–1
10
10
–2
7
5
Inverter IGBT part : Per unit base = R
th(j–c)
= 0.17K/W
3
Inverter FWDi part : Per unit base = R
th(j–c)
= 0.33K/W
: Per unit base = R
th(j–c)
= 0.31K/W
2
Brake IGBT part
5
0
0
200
400
600
800
Brake Clamp-Di part : Per unit base = R
th(j–c)
= 0.59K/W
10
–3
–5
2 3 57
10
–4
2 3 57
10
–3
2 3 57
10
–2
2 3 57
10
–1
2 3 57
10
0
2 3 57
10
1
10
TIME (s)
GATE CHARGE Q
G
(nC)
Jan. 2009
7
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
