MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR/R
B
(25/50)
P
25
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
Min.
4.85
–7.3
—
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
(Note. 7)
MODULE
Symbol
R
th(c-f)
Parameter
Conditions
(Note. 2)
Min.
—
Limits
Typ.
0.015
Max.
—
Unit
K/W
Contact thermal resistance
Thermal grease applied
(Note. 1) per 1 module
(Case to fin)
Note.1: Case temperature (T
C
), heat sink temperature (T
f
) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of
λ
= 0.9W/(m·K).
3: I
E
, I
ERM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
I
F
, I
FRM
, V
F
, V
RRM
and I
RRM
represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
5: Junction temperature (T
j
) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
CE(sat)
and V
EC
)
1
7:
B
(25/50)
= In( R
25
)/( 1
)
T
50
R
50
T
25
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
Chip Location (Top view)
22.9
33.9
44.9
55.9
79.4
0
91.4
Dimensions in mm (tolerance:
±1mm)
92.4
100.2
101.8
106.0
LABEL SIDE
0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
0
17.4
(62)
(50)
35
24.4
28.0
35.0
36
Tr
UP
Di
UP
(77.1)
Tr
UN
Di
UN
1
Tr
VP
Di
VP
Tr
VN
Di
VN
2
3
Tr
WP
Di
WP
Di
Tr Br
WN Th
Di
WN
Tr
Br
4
12
11
10
9
8
7
6
5
18.3
26.8
39.7
(110)
(121.7)
(136.9)
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
Jan. 2009
4
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
