MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
(Tj = 25
°
C, unless otherwise specified)
Conditions
G-E Short
C-E Short
DC, T
C
= 68°C
Collector current
Pulse
Maximum collector dissipation T
C
= 25°C
Emitter current
T
C
= 25°C
(Free wheeling diode forward current) Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Rating
600
±20
200
400
735
200
400
Unit
V
A
W
A
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
G-E Short
C-E Short
DC, T
C
= 75°C
Collector current
Pulse
Maximum collector dissipation T
C
= 25°C
Repetitive peak reverse voltage
T
C
= 25°C
Forward current
Pulse
Rating
600
±20
100
200
400
600
100
200
Unit
V
A
W
V
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
MODULE
Symbol
T
j
T
stg
V
iso
—
—
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Torque strength
Weight
Conditions
Rating
–40 ~ +150
–40 ~ +125
2500
±0
~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
Unit
°C
Vrms
μm
N·m
g
Terminals to base plate, f = 60Hz, AC 1 minute
(Note. 8)
On the centerline X, Y
M5 screw
Main terminals
M5 screw
Mounting
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
Heat sink side
Y
+
–
+ convex
：
–
concave
：
X
–
+
Heat sink side
Jan. 2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
